Consistent optical and electrical determination of carrier concentrations for the accurate modeling of the transport properties of n-type Ge

A consistent methodology is presented to extract carrier concentrations in n-type Ge from measurements of the infrared dielectric function and Hall effect. In case optical measurements—usually carried out using spectroscopic ellipsometry—the concentration affected by doping dependence conductivity effective mass, which computed a model electronic density states that accounts for non-parabolicity fit structure calculations. Carrier obtained require knowledge factor, arbitrarily set equal unit most practical applications. We have calculated factor n-Ge scattering with phonons ionized impurities. show determinations n our mass virtually eliminates any systematic discrepancy between two types measurement. then use these results compute majority mobilities measured resistivity values, compare minority mobilities, empirical expressions can be used devices.